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2N3906

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2N3906 PNP Silicon

APPLICATIONS:

-WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT
– SMALL LOAD SWITCH TRANSISTOR WITH
– HIGH GAIN AND LOW SATURATION VOLTAGE

2N3906 datasheet pdf

2N3906
2N3906

Replacement and Equivalent for 2N3906 transistor

2N4403, 2SA696, 2SA697, 2SA708, BC527, BC528, KN2907, KN2907A, KN3906, KSA708, KSP2907A, KSP55, KSP56, KSP8598, KSP8599, KTN2907, KTN2907A, MPS2907, MPS2907A, MPS2907AG, MPS2907G, MPS3906, MPS4354, MPS4355, MPS750, MPS750G, MPS751, MPS751G, MPS8598, MPS8598G, MPS8599, MPS8599G, MPSA55, MPSA55G, MPSA56, MPSA56G, MPSW51A, MPSW51AG, MPSW55, MPSW55G, MPSW56, MPSW56G, P2N2907A, P2N2907AG, PN200, PN2905, PN2905A, PN2907, PN2907A, PN4354, PN4355, ZTX550 or ZTX951.

Complementary NPN transistors:

The complementary NPN transistors are the 2N3906 and the 2N3904.

ABSOLUTE MAXIMUM RATINGS 2N3906

ParameterSymbolValueUnit
Collector − Emitter VoltageVCEO60Vdc
Collector − Base VoltageVCBO40Vdc
Emitter − Base VoltageVEBO6Vdc
Collector Current − ContinuousIC200mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Total Power Dissipation @ TA = 60°CPD250W
mW/°C
Total Device Dissipation @ T C = 25°C
Derate above 25°C
PD1.5
12
°C

THERMAL CHARACTERISTICS 2N3906

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction−to−AmbientRJA200°C/W
Thermal Resistance, Junction−to−CaseRJC83.3°C/W

ELECTRICAL CHARACTERISTICS 2N3906

(TA = 25°C unless otherwise noted)

CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)V(BR)CEO40Vdc
Collector −Base Breakdown Voltage (IC = 10 μAdc, IE = 0)V(BR)CBO40Vdc
Emitter −Base Breakdown Voltage (IE = 10 μAdc, IC = 0)V(BR)EBO5.0
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)IBL50nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)ICEX50nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
60
80
100
60
30



300

Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
0.25
0.4
Vdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)0.65
0.85
0.95
Vdc

SMALL−SIGNAL CHARACTERISTICS

CharacteristicSymbolMinMaxUnit
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)fT250MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)C obo4.5pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)C ibo10pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hie2.012
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hre0.110X10− 4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHzhfe100400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hoe3.060μmhos
Noise Figure (IC = 100μ Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)NF4.0dB

SWITCHING CHARACTERISTICS

CharacteristicSymbolMinMaxUnit
Delay Time(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td35ns
Rise Time(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
tr35ns
Storage Time(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)ts225ns
Fall Time(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)tf75ns

PACKAGE DIMENSIONS