2N3906 PNP Silicon
APPLICATIONS:
-WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT
– SMALL LOAD SWITCH TRANSISTOR WITH
– HIGH GAIN AND LOW SATURATION VOLTAGE
Replacement and Equivalent for 2N3906 transistor
2N4403, 2SA696, 2SA697, 2SA708, BC527, BC528, KN2907, KN2907A, KN3906, KSA708, KSP2907A, KSP55, KSP56, KSP8598, KSP8599, KTN2907, KTN2907A, MPS2907, MPS2907A, MPS2907AG, MPS2907G, MPS3906, MPS4354, MPS4355, MPS750, MPS750G, MPS751, MPS751G, MPS8598, MPS8598G, MPS8599, MPS8599G, MPSA55, MPSA55G, MPSA56, MPSA56G, MPSW51A, MPSW51AG, MPSW55, MPSW55G, MPSW56, MPSW56G, P2N2907A, P2N2907AG, PN200, PN2905, PN2905A, PN2907, PN2907A, PN4354, PN4355, ZTX550 or ZTX951.
Complementary NPN transistors:
The complementary NPN transistors are the 2N3906 and the 2N3904.
ABSOLUTE MAXIMUM RATINGS 2N3906
| Parameter | Symbol | Value | Unit |
| Collector − Emitter Voltage | VCEO | 60 | Vdc |
| Collector − Base Voltage | VCBO | 40 | Vdc |
| Emitter − Base Voltage | VEBO | 6 | Vdc |
| Collector Current − Continuous | IC | 200 | mAdc |
| Total Device Dissipation @ TA = 25°C Derate above 25°C | PD | 625 5.0 | mW mW/°C |
| Total Power Dissipation @ TA = 60°C | PD | 250 | W mW/°C |
| Total Device Dissipation @ T C = 25°C Derate above 25°C | PD | 1.5 12 | °C |
THERMAL CHARACTERISTICS 2N3906
| Characteristic | Symbol | Max | Unit |
| Thermal Resistance, Junction−to−Ambient | RJA | 200 | °C/W |
| Thermal Resistance, Junction−to−Case | RJC | 83.3 | °C/W |
ELECTRICAL CHARACTERISTICS 2N3906
(TA = 25°C unless otherwise noted)
| Characteristic | Symbol | Min | Max | Unit |
| OFF CHARACTERISTICS | ||||
| Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) | V(BR)CEO | 40 | – | Vdc |
| Collector −Base Breakdown Voltage (IC = 10 μAdc, IE = 0) | V(BR)CBO | 40 | – | Vdc |
| Emitter −Base Breakdown Voltage (IE = 10 μAdc, IC = 0) | V(BR)EBO | 5.0 | – | |
| Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) | IBL | – | 50 | nAdc |
| Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) | ICEX | – | 50 | nAdc |
| ON CHARACTERISTICS | ||||
| DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) | hFE | 60 80 100 60 30 | − − 300 − − | − |
| Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc | VCE(sat) | − − | 0.25 0.4 | Vdc |
| Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) | VBE(sat) | 0.65 − | 0.85 0.95 | Vdc |
SMALL−SIGNAL CHARACTERISTICS
| Characteristic | Symbol | Min | Max | Unit |
| Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) | fT | 250 | − | MHz |
| Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) | C obo | − | 4.5 | pF |
| Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | C ibo | − | 10 | pF |
| Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hie | 2.0 | 12 | kΩ |
| Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hre | 0.1 | 10 | X10− 4 |
| Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | hfe | 100 | 400 | − |
| Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hoe | 3.0 | 60 | μmhos |
| Noise Figure (IC = 100μ Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) | NF | − | 4.0 | dB |
SWITCHING CHARACTERISTICS
| Characteristic | Symbol | Min | Max | Unit | |
| Delay Time | (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) | td | − | 35 | ns |
| Rise Time | (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) | tr | − | 35 | ns |
| Storage Time | (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) | ts | − | 225 | ns |
| Fall Time | (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) | tf | − | 75 | ns |
PACKAGE DIMENSIONS
