2N3904 NPN Silicon
APPLICATIONS:
-WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT
– SMALL LOAD SWITCH TRANSISTOR WITH
– HIGH GAIN AND LOW SATURATION VOLTAGE
Replacement and Equivalent for 2N3904 transistor
2N4401, 2SC1008, 2SC1210, 2SC1211, 2SC815, BC537, BC538, KN2222A, KN3904, KSC1008, KSC815, KSP05, KSP06, KSP2222A, KSP8098, KSP8099, KTN2222A, MPS2222A, MPS2222AG, MPS650, MPS650G, MPS651, MPS651G, MPS8098, MPS8098G, MPS8099, MPS8099G, MPSA05, MPSA05G, MPSA06, MPSA06G, MPSW01A, MPSW01AG, MPSW05, MPSW05G, MPSW06, MPSW06G, NTE123AP, P2N2222A, P2N2222AG, PN100, PN2219A, PN2222A, PN3569, PN4033 or ZTX450.
Complementary PNP transistor
The complementary PNP transistor to the 2N3904 is the 2N3906.
ABSOLUTE MAXIMUM RATINGS 2N3904
| Parameter | Symbol | Value | Unit |
| Collector − Emitter Voltage | VCEO | 40 | Vdc |
| Collector − Base Voltage | VCBO | 60 | Vdc |
| Emitter − Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current − Continuous | IC | 200 | mAdc |
| Total Device Dissipation @ TA = 25°C Derate above 25°C | PD | 625 5.0 | mW mW/°C |
| Total Device Dissipation @ TC = 25°C Derate above 25°C | PD | 1.5 12 | W mW/°C |
| Operating and Storage Junction Temperature Range | TJ , Tstg | −55 to +150 | °C |
THERMAL CHARACTERISTICS 2N3904
| Characteristic | Symbol | Max | Unit |
| Thermal Resistance, Junction−to−Ambient | RJA | 200 | °C/W |
| Thermal Resistance, Junction−to−Case | RJC | 83.3 | °C/W |
ELECTRICAL CHARACTERISTICS 2N3904
(TA = 25°C unless otherwise noted)
| Characteristic | Symbol | Min | Max | Unit |
| OFF CHARACTERISTICS | ||||
| Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) | V(BR)CEO | 40 | – | Vdc |
| Collector −Base Breakdown Voltage (IC = 10 μAdc, IE = 0) | V(BR)CBO | 60 | – | Vdc |
| Emitter −Base Breakdown Voltage (IE = 10 μAdc, IC = 0) | V(BR)EBO | 5.0 | – | |
| Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) | IBL | – | 50 | nAdc |
| Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) | ICEX | – | 50 | nAdc |
| ON CHARACTERISTICS | ||||
| DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) | hFE | 40 70 100 60 30 | − − 300 − − | − |
| Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc | VCE(sat) | − − | 0.25 0.4 | Vdc |
| Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) | VBE(sat) | 0.65 − | 0.85 0.95 | Vdc |
SMALL−SIGNAL CHARACTERISTICS
| Characteristic | Symbol | Min | Max | Unit |
| Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) | fT | 300 | − | MHz |
| Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) | C obo | − | 4.0 | pF |
| Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | C ibo | − | 8 | pF |
| Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hie | 1.0 | 10 | kΩ |
| Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hre | 0.5 | 8.0 | X10− 4 |
| Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | hfe | 100 | 400 | − |
| Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) | hoe | 1.0 | 40 | μmhos |
| Noise Figure (IC = 100μ Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) | NF | − | 5.0 | dB |
SWITCHING CHARACTERISTICS
| Characteristic | Symbol | Min | Max | Unit | |
| Delay Time | (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) | td | − | 35 | ns |
| Rise Time | (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) | tr | − | 35 | ns |
| Storage Time | (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) | ts | − | 200 | ns |
| Fall Time | (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) | tf | − | 50 | ns |
PACKAGE DIMENSIONS
